GP1A044RxKLF Series
Design Considerations
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Design guide
1) It is recommended that this product be used under the condition of typical IF 15mA for which it is
=
designed.
2) In order to stabilize power supply line, connect a by-pass capacitor of more than 0.01 F between VCC and
μ
GND near the device.
3) When using this product in combination with linear scale, please set them up so that the scale face should
not touch this product.
4) OPIC chip due to micro design is easily affected by the Electro static discharge. At operating, in order to
protect the destruction and the defect of characteristics by Electro static discharge, please take a general
countermeasure of the Electro static discharge.
This product is not designed against irradiation and incorporates non-coherent IRED.
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Parts
This product is assembled using the below parts.
[Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit]
• Photodetector (qty. : 1)
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Category
Response time (μs)
Photodiode
780
400 to 1 200
50
• Photo emitter (qty. : 1)
Maximum light emitting
Category
Material
GaAlAs
wavelength (nm)
Infrared emitting diode
(non-coherent)
850
• Material
Holder
Bottom cover
Lens holder
Lead frame plating
SnAgCu dipping
Black polycarbonate resin
Black polycarbonate resin
Transparent polycarbonate resin
• Others
Laser generator is not used.
Sheet No.: D3-A05801EN
7
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
