Super-luminosity(AlGaInP)Leadless Chip LED
GM5Y❏01200A series
GM5Y❏01200A series
(Under development)
6050 Size, 2.4mm Thickness,
Leadless Chip LED
I
Directive Characteristics
I
Outline Dimensions
5.7
5
(Unit : mm)
(T
a
=25˚C)
2
1
6
1
1.7
3
4
Relative luminous intensity(%)
-50˚
+50˚
80
0.8
-40˚
-30˚
-20˚
-10˚
0˚ 100 +10˚
+20˚
+30˚
+40˚
ø3
.2
0.8
-60˚
60
+60˚
1
1.3
1.4
-70˚
40
+70˚
2.4
Pin connections
2
1
1
3
3
4
2
4
1.4
Recommended PWB pattern for soldering
Photoresist
8.4
6.3
3.0
6.7
2
1
-80˚
20
+80˚
-90˚
0˚
+90˚
Anode
Cathode
3
2.1
5.8
4
I
Absolute Maximum Ratings
Model No. Emitting color
Material
Power dissipation Forward current Peak forward current
P
I
F
I
FM*1
(mA)
(mA)
(mW)
180
180
180
200
200
200
(T
a
=25˚C)
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/˚C)
V
R
T
opr
T
stg
T
sol*2
(V)
(˚C)
(˚C)
(˚C)
DC Pulse
2.40
2.40
2.40
2.67
2.67
2.67
5
5
5
-55 to +100
-55 to +100
-55 to +100
-55 to +100
-55 to +100
-55 to +100
295
295
295
GM5YJ01200A
Orange
AlGaInP on GaAs
400
GM5YS01200A
Sunset orange AlGaInP on GaAs
400
GM5YV01200A
Amber
AlGaInP on GaAs
400
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering.
I
Electro-optical Characteristics
Lens type
Model No.
Forward voltage
V
F
(V)
TYP
2.5
2.5
2.5
MAX
3.4
3.4
3.4
Peak emission
wavelength
λ
p
(nm)
TYP
627
609
591
Dominant
wavelength
λ
d
(nm)
TYP
618
605
588
Luminous
intensity
I
V
(mcd)
TYP
1500
1700
1300
Spectrum radiation
bandwidth
∆λ(nm)
TYP
18
18
18
(I
F
=150mA,T
a
=25˚C)
Reverse current
V
R
I
R
(µA)
(V)
MAX
100
100
100
4
4
4
Page for
characteristics
diagrams
53
53
53
GM5YJ01200A
Colorless
GM5YS01200A
transparency
GM5YV01200A
18
Notice
Internet
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