Preliminary
■
Absolute Maximum Ratings
Parameter
Power dissipation (Package total)
Junction temperature
Thermal resistance (junction-to-case)
Forward current *1
Peak pulsed forward current *1, *2
Forward current derating factor *1, 2
Reverse voltage *1
Operating temperature *3
Storage temperature *4
Soldering temperature *5
Symbol
P
T
J
K
I
F
I
FM
DC
Pulse
V
R
Tc
Tstg
Tsol
Rating
300
125
95
30
100
0.50
1.67
5
-30 to +100
-40 to +100
295
GM5BW97331A
(Tc = 25°C)
Unit
mW
°C
°C/W
mA
mA
mA/°C
mA/°C
V
°C
°C
°C
single
*
1 Rating for = 1/10,chip (die) operation.
2 Duty ratio
width =
*
3 Case temperaturePulse External0.1 ms.
(See
Dimensions
*
4 Do not exceed these temperatures under anyon page 2). in packing. Refer to
Storage and Handling.
condition while
*
5 Each terminal must be soldered with a 30 W soldering iron within 3 seconds under 295°C.
*
For Reflow Soldering information, see Fig. 19.
values here follow the derating curves
*
6 Operating currentthe leads for heat sinking, therefore the shown in Fig. 1 throughrange3.is prescribed by Tc.
7 This device uses
operating temperature
*
■
Electro-optical Characteristics
Parameter
Forward voltage *1
Luminous intensity *1, *2
Chromaticity coordinates *1, *3
Reverse current *1
Symbol
V
F
I
V
x, y
I
R
Conditions
I
F
= 20 mA (per chip)
I
F
= 20 mA
(per chip, all chips on)
V
R
= 4 V (per chip)
—
MIN.
3.0
TYP.
(3.2)
(7.0)
(0.335, 0.344)
—
10
MAX.
3.4
(Tc = 25°C)
Unit
V
cd
µA
(die) operation.
*
1 Rating for three-chip Model 550 (Radiometer/Photometer) after 20 ms drive (Tolerance: ±15%) See the Luminosity Rank table for ranking range details.
2 Measured by EG&G
*
3 Measured by Otuka Electronics Model MCPD-2000 after 20 ms drive (Tolerance: x, y: ±0.02). All chips (die) operating. See the Chromaticity Rank
*
table for ranking range details.
*4 Parens indicate reference values.
3
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