Super-luminosity(InGaN)Leadless Chip LED
GM5BT01200A/GM5GT01200A
GM5BT01200A/GM5GT01200A
s
Outline Dimensions
5.7
5
6050 Size, 2.4mm Thickness,
Leadless Chip LED
s
Radiation Diagram
(Unit : mm)
(T
a
=25˚C)
2
1
1
1.7
6
-40˚
-30˚
-20˚
-10˚
0˚ 100 +10˚
+20˚
+30˚
+40˚
0.8
3
4
Cathode mark
Relative luminous intensity(%)
-50˚
+50˚
80
ø3
.2
0.8
-60˚
60
+60˚
-70˚
40
+70˚
1
1.3
1.4
-80˚
20
+80˚
2.4
Pin connections
2
1
1
3
3
4
2
4
1.4
Recommended PWB pattern for soldering
8.4
2.4
Anode
5.8
1.6
-90˚
0˚
+90˚
Anode
Cathode
Cathode
Device center
s
Absolute Maximum Ratings
Power dissipation Forward current Peak forward current
P
I
F
I
FM*1
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
Derating factor Reverse voltage Operating temperature Storage temperature
(mA/˚C)
V
R
T
opr
T
stg
(V)
(˚C)
(˚C)
DC Pulse
-55 to +110
-55 to +110
-55 to +110
-55 to +110
(T
a
=25˚C)
Soldering temperature
T
sol*2
(˚C)
295
295
GM5BT01200A
Blue
InGaN
276
60
60
0.71 0.71
5
GM5GT01200A
Green
InGaN
258
60
60
0.71 0.71
5
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the page 7.
s
Electro-optical Characteristics
Lens type
Model No.
Forward voltage
V
F
(V)
TYP
3.8
3.6
MAX
4.6
4.3
Peak emission
wavelength
λ
p
(nm)
TYP
463
519
Dominant
wavelength
λ
d
(nm)
TYP
469
523
Luminous
intensity
I
V
(mcd)
TYP
141
762
(I
F
=50mA,T
a
=25˚C)
Reverse current
V
R
I
R
(µA)
(V)
MAX
100
100
4
4
Page for
characteristics
diagrams
-
-
Colorless
GM5BT01200A
transparency
GM5GT01200A
112
Notice
Internet
In the absence of confirmation by device specification sheets,SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in
catalogs,data books,etc.Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
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