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GH04P21A2GE 参数 Datasheet PDF下载

GH04P21A2GE图片预览
型号: GH04P21A2GE
PDF下载: 下载PDF文件 查看货源
内容描述: 技术文献半导体激光器 [TECHNICAL LITERATURE FOR LASER DIODE]
分类和应用: 半导体
文件页数/大小: 4 页 / 42 K
品牌: SHARP [ SHARP ELECTRIONIC COMPONENTS ]
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MODEL No.
PAGE
GH04P21A2GE
Ratings and characteristics
Absolute Maximum Ratings
Parameter
Optical power output(CW) (Note 2)
Optical power output(Pulse) (Note 3)
Reverse voltage
Operatings temperature
(case temp.)
Soldering temperature (Note 4)
(Note
(Note
(Note
(Note
3/3
No. LH07309
(Tc=25℃(Note 1))
Symbol
Po
Pp
Vrl
Topc(c)
Topp(c)
Tstg
Tsld
Ratings
105
210
2
-10∼+70
-10∼+70
-40∼+85
300
unit
mW
mW
V
Laser diode
CW (Note 2)
Pulse (Note3)
Storage temperature(case temp.)
1) Tc :Case temperature
2) CW :Continuous Wave Operation
3) Pulse :Pulse Operation(Pulse Width 50ns Duty:50%)
4) Soldering position is 1.6mm apart from bottom edge of the case.(Immersion time: 3s)
Electro-optical Characteristics (Note 1)
Parameter
Threshold current
Operating current
Operating voltage
Wavelength
Radiation Angle
Characte- (Note 3)
ristics
(Note 4)
Radiation Angle
Characte- (Note 3)
ristics
(Note 4)
Emission
point
accuracy
Angle
(Note 4)
Symbol
Ith
Iop
Vop
λp
θ‖
θ⊥
θ‖
θ⊥
Δθ‖
Δθ⊥
ηd
K-LI
95mW
I(105mW)-I(10mW)
(Tc=25℃ (Note 2) )
min
-
-
-
typ
40
110
5.4
406
9
19
8.5
19
0
0
1.5
-
max
60
150
6.5
415
12
22
11.5
22
2.5
3
-
10
Conditions
-
unit
mA
mA
V
nm
°
°
°
°
°
°
mW/mA
%
Po=105mW
400
6
16
5.5
Po=5mW
16
-2.5
-3
1.1
-10
Differential efficiecy
Kink
(Note 5, Note 6)
(Note
(Note
(Note
(Note
1)
2)
3)
4)
P1=42mW
P2=126mW
P3=210mW
Initial value, Continuous Wave Operation.
Tc : Case temperature
Angle of 50% peak intensity.(Full angle at half-maximum)
Paralel to the junction plane.(X-Z plane)
Perpendicular to the junction plane.(Y-Z plane)
(Note 5) Pulse :Pulse Operation(Pulse Width 50ns Duty:50%)
(Note 6) Definition of Kink
Kink : K-LI=(P4-P3)/P3
Least squares l inear fi t
between P 1 and P2
P4
P3
real I-L Data
Po
P2
P1
Ith
Ip1
Ip2
If
Ip3