SPXXMXXX-XXX
DATA SHEET 658, REV. -
MOSFET CHARACTERISTICS
Dual H-Bridge Devices
VDSS
Continuous
Drain
Pulsed
Drain
Rds(on)@ID
Ciss
Typ
trr
Maximum
R
JC
PART
NUMBER
max
PD@
Current
Current
25oC
TC=25oC
IC @ Tc=25oC
TC=25oC
Volts
60
100
200
600
Amps
75
45
30
11
Amps
220
130
120
45
nF
ns
60
170
360
250
Watts
150
180
180
180
A
oC/W
1.0
0.70
0.70
0.40
SPC8M075-006
SPC8M045-010
SPC8M030-020
SPC8M011-060
0.010
20
20
15
5.0
2.8
3.5
2.8
2.7
0.030
0.075
0.55
DIODE CHARACTERISTICS
trr @ -di/dt=100A/ sec, TJ=25oC
Current Rating
VF @ IF
TJ=25oC
Typ
Thermal
PART
IFavM @ D=0.5, Tc
Resistance
NUMBER
Typ
ns
30
30
30
50
R
JC
oC
Volts Amps
oC/W
1.6
1.6
1.6
1.6
Amps
SPC8M075-006
SPC8M045-010
SPC8M030-020
SPC8M011-060
25
80
1.05
1.05
1.05
1.6
25
25
25
15
25
25
15
80
80
80
Three-Phase Bridge Devices
MOSFET CHARACTERISTICS
VDSS
Continuous
Drain
Pulsed
Drain
Rds(on)@ID
Ciss
Typ
trr
Maximum
PD@
R
JC
PART
NUMBER
max
Current
Current
25oC
TC=25oC
IC @ Tc=25oC
TC=25oC
Volts
60
100
200
600
1000
Amps
75
45
30
11
Amps
220
130
120
45
nF
ns
60
170
360
250
250
Watts
150
180
180
180
180
A
20
20
15
5.0.
3.0
oC/W
1.0
0.70
0.70
0.70
0.70
SPC6M075-006
SPC6M045-010
SPC6M030-020
SPC6M011-060
SPC6M006-060
0.010
2.8
3.5
2.8
2.7
2.6
0.030
0.075
0.55
2.0
6.0
24
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