SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4233, Rev-
1C4004
STANDARD RECOVERY
SILICON RECTIFIER DIE
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Die Size
Max. Junction Temperature
Max. Storage Temperature
Symbol
V
RWM
I
F(AV)
-
T
J
T
stg
Condition
-
@ 55°C
-
-
-
Max.
400
1.0
40
-55 to +175
-55 to +175
Units
V
A
mil
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
V
F1
Condition
@ 1.0A, Pulse, T
J
= 25
°C
Duty cycle
≤
2%, pulse width
≤
300µs
@V
R
= 200V, Pulse,
T
J
= 25
°C
@V
R
= 200V, Pulse,
T
J
= 100
°C
I
f
= 500mA, I
r
= 1A, I
rm
=
250mA
Max.
1.1
Units
V
Max. Reverse Current
I
R1
I
R2
10
50
2000
µA
µA
ns
Reverse Recovery Time
t
rr
Mechanical Dimensions: In Inches / mm
Bottom side metalization: Ti/NiAg - 30 kÅ minimum.
Top side metalization: Al - 25 kÅ minimum
ANODE
0.024
±
0.003
(0.610
±
0.076)
0.040
±
0.003
(1.016
±
0.076)
Bottom side is cathode, top side is anode.
Anode
0.009 ± 0.001 (0.229 ± 0.025)
Cathode
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