MMBTA42 / MMBTA43
O
Characteristics at Tamb=25 C
Symbol
Min.
Max.
Unit
DC Current Gain
hFE
hFE
hFE
hFE
25
40
40
40
-
-
-
-
-
-
-
-
at VCE=10Vdc, IC=1mA
at VCE=10Vdc, IC=10mA
at VCE=10Vdc,IC=30mA
Both Types
Both Types
MMBTA42
MMBTA43
Collector Emitter Saturation Voltage
at IC=20mA, IB=2mA
VCE(sat)
VCE(sat)
-
-
0.5
0.5
V
V
MMBTA42
MMBTA43
Base Emitter Saturation Voltage
at IC=20mA, IB=2mA
Collector Cutoff Current
at VCB=200V
VBE(sat)
-
0.9
V
ICBO
ICBO
-
-
0.1
0.1
µA
µA
MMBTA42
MMBTA43
at VCB=160V
Emitter Cutoff Current
at VEB=6V
IEBO
IEBO
-
0.1
0.1
µA
µA
MMBTA42
MMBTA43
at VEB=4V
Collector Base Breakdown Voltage
at IC=100µA
V(BR)CBO
V(BR)CBO
300
200
-
-
V
V
MMBTA42
MMBTA43
Collector Emitter Breakdown Voltage
at IC=1mA
V(BR)CEO
V(BR)CEO
300
200
-
-
V
V
MMBTA42
MMBTA43
Emitter Base Breakdown Voltage
at IE=100µA
V(BR)EBO
6
-
-
V
Current Gain Bandwidth Product
at VCE=20V, IC=10mA, f=100MHz
Collector Base Capacitance
at VCB=20V, IE=0, f=1MHz
fT
50
MHz
Ccb
Ccb
-
-
3
4
pF
pF
MMBTA42
MMBTA43
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
SEMTECH [ SEMTECH CORPORATION ]
