MMBT3906
Characteristics at T
amb
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 0.1 mA
at -V
CE
= 1 V, -I
C
= 1 mA
at -V
CE
= 1 V, -I
C
= 10 mA
at -V
CE
= 1 V, -I
C
= 50 mA
at -V
CE
= 1 V, -I
C
= 100 mA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
=1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
Base Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
Collector Cutoff Current
at -V
CB
= 30 V
Base Cutoff Current
at -V
EB
= 6 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter - Base Breakdown Voltage
at -I
E
= 10 µA
Current Gain Bandwidth Product
at -V
CE
= 20 V, -I
C
= 10 mA, f = 100 MHz
Output Capacitance
at -V
CB
= 5V, I
E
= 0, f = 1 MHz
Input Capacitance
at -V
EB
= 0.5 V, I
C
= 0, f = 1 MHz
Input Impedance
at -I
C
= 1 mA, -V
CE
= 10 V, f = 1 KHz
Voltage Feedback Ratio
at -I
C
= 1 mA, -V
CE
= 10 V, f = 1 KHz
Small Signal Current Gain
at -I
C
= 1 mA, -V
CE
= 10 V, f = 1 KHz
-V
BEsat
-V
BEsat
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
0.65
-
-
-
40
40
6
250
-
-
2
0.1
100
0.85
0.95
50
50
-
-
-
-
4.5
10
12
10
400
V
V
nA
nA
V
V
V
MHz
pF
pF
KΩ
X 10
-
-4
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
-V
CEsat
-V
CEsat
Min.
60
80
100
60
30
-
-
Max.
-
-
300
-
-
0.25
0.4
Unit
-
-
-
-
-
V
V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/12/2005
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
