MMBT3904
Characteristics at T
amb
=25
O
C
Output Admittance
at I
C
= 1 mA, V
CE
= 10 V, f = 1 KHz
Noise Figure
at I
C
= 1 µA, V
CE
= 5 V, R
S
= 1 Kohms, f = 1 KHz
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 3 V, V
BE
= -0.5 V,
I
C
= 10 mA, I
B1
= 1 mA
V
CC
= 3 V, I
C
= 10 mA,
I
B1
= I
B2
= 1 mA
h
oe
NF
t
d
t
r
t
s
t
f
1
-
-
-
-
-
40
5
35
35
200
50
µmhos
dB
ns
ns
ns
ns
500
V
ce
=5V
400
125°C
300
200
100
0
0.1
1
10
100
-40°C
V
CESAT
-Collector-Emitter Voltage (v)
h
FE
-Typical Pulsed Current Gain
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
β=10
125°C
0.1
25°C
25°C
0.05
-40°C
0.1
1
10
100
I
c
-Collector Current (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1
I
C
-Collector Current (mA)
Base-Emitter On Voltage vs
Collector Current
1
V
CE
=5V
0.8
-40°C
0.6
25°C
125°C
0.4
β=10
-40°C
25°C
125°C
0.8
0.6
0.4
0.1
1
10
100
V
BE(ON)
- Base-emitter on voltage (v)
V
BESAT
-Base-Emitter Voltage (V)
0.2
0.1
1
10
100
I
C
-Collector Current (mA)
I
c
- Collector Current (mA)
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/12/2005
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
