BAV99W
HIGH-SPEED DOUBLE SWITCHING DIODE
3
1
2
Marking Code:
A7
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous F
orward Current
Single Diode Load
1)
Double Diode Load
1)
Symbol
V
RRM
V
R
I
F
I
FRM
at t = 1
µs
at t = 1
ms
at t = 1
s
Value
85
75
150
130
500
4
1
0.5
200
150
-65 to +150
625
Unit
V
V
mA
mA
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
Square Wave; T
j
= 25
O
C Prior to Surge
I
FSM
A
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance from Junction to Ambient
1)
1)
P
tot
T
j
T
stg
R
th j-a
mW
O
C
C
O
K/W
Device mounted on an FR4 printed-circuit board.
Characteristics at T
j
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 25 V
at V
R
= 75 V
at V
R
= 25 V, T
j
= 150
O
C
at V
R
= 75 V, T
j
= 150
O
C
Diode Capacitance
at f = 1 MHz; V
R
= 0
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 10 mA, R
L
= 100
Ω;
measured at I
R
= 1 mA
Forward Recovery Voltage
at I
F
= 10mA, t
r
= 20 ns
Symbol
Max.
0.715
0.855
1
1.25
30
1
30
50
1.5
4
1.75
Unit
V
F
V
I
R
nA
µA
µA
µA
pF
ns
V
C
d
t
rr
V
fr
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2006