BAV70
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
1
3
2
Marking Code:
A4
SOT-23 Plastic Package
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
at t = 1 s
at t = 1 µs
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
d
T
j
T
s
Value
100
75
200
300
1
2
350
150
- 55 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150
O
C
at V
R
= 75 V, T
J
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
Total Capacitance
at f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA to I
rr
= 1 mA, R
L
= 50
Ω
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
I
R
V
(BR)R
C
T
t
rr
Min.
-
-
-
-
Max.
715
855
1
1.25
25
2.5
30
50
-
2
4
Unit
mV
mV
V
V
nA
µA
µA
µA
V
pF
ns
-
-
-
75
-
-
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/01/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
