BAS16W
Silicon Epitaxial Planar Small Signal Diode
High Speed Switching Diode
3
1
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current (at T
S
= 90
O
C)
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
at Square Wave; T
j
= 25
O
C Prior to Surge t = 1 µs
t = 1 ms
t=1s
Total Power Dissipation (at T
S
= 90
O
C)
Thermal Resistance from Junction to Soldering Point
Junction Temperature
Storage Temperature Range
2
Marking Code:
A6
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
R
th j-S
T
j
T
stg
Value
85
75
155
500
4
1
0.5
170
350
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
K/W
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 25 V
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150
O
C
at V
R
= 75 V, T
J
= 150
O
C
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
when switched from I
F
= 10 mA to I
R
= 10 mA,
R
L
= 100
Ω;
measured at I
R
= 1 mA
Forward Recovery Voltage
when switched from I
F
= 10 mA, t
r
= 20 ns
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
I
R
C
D
t
rr
V
fr
Max.
715
855
1000
1250
30
1
30
50
1.5
4
1.75
Unit
mV
mV
mV
mV
nA
µA
µA
µA
pF
ns
V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/08/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
