BAS16
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
3
1
2
Marking Code:
5D
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
t = 1 µs
t = 1 ms
t=1s
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
s
Value
85
75
215
500
4
1
0.5
250
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 25 V
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150
O
C
at V
R
= 75 V, T
J
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, R
L
= 50
Ω
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
I
R
V
(BR)R
C
d
t
rr
Min.
-
-
-
-
Max.
715
855
1
1.25
30
1
30
50
-
2
4
Unit
mV
mV
V
V
nA
µA
µA
µA
V
pF
ns
-
-
-
75
-
-
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/10/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
