BA592WS
SILICON RF SWITCHING DIODE
Features
• Very low forward resistance
• Small capacitance
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
Applications
• For band switching in TV/VTR
tuners and mobile applications
1
W4
Top View
Marking Code: "W4"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Diode Reverse Voltage
Forward Current
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Symbol
V
R
I
F
T
J
T
op
T
stg
Value
35
100
150
- 55 to + 125
- 55 to + 150
Unit
V
mA
O
C
C
C
O
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
Reverse Current
at V
R
= 20 V
Forward Voltage
at I
F
= 100 mA
Diode Capacitance
at V
R
= 1 V, f = 1 MHz
at V
R
= 3 V, f = 1 MHz
Reverse Parallel Resistance
at V
R
= 0 V, f = 100 MHz
Forward Resistance
at I
F
= 3 mA, f = 100 MHz
at I
F
= 10 mA, f = 100 MHz
Series Inductance
Symbol
I
R
V
F
C
T
R
P
r
f
L
s
Min.
-
-
0.65
0.6
-
Typ.
-
-
-
-
100
Max.
20
1
1.4
1.1
-
Unit
nA
V
pF
KΩ
-
-
-
-
-
1.8
0.7
0.5
-
Ω
nH
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
