1SV3401
SILICON EPITAXIAL PLANAR DIODE
Band Switching Diode
For VHF band switching applications
3
1
2
Marking Code:
JC
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Forward Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
D
T
j
T
s
Value
35
200
125
- 55 to + 150
Unit
V
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Reverse Voltage
at I
R
= 10
μA
Reverse Current
at V
R
= 25 V
Total Capacitance
at V
R
= 20 V, f = 1 MHz
Series Resistance
at I
F
= 10 mA, f = 100 MHz
Symbol
V
R
I
R
C
T
r
s
Min.
35
-
-
-
Max.
-
0.1
1
0.7
Unit
V
μA
pF
Ω
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/05/2006