1SS83
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
Max. 0.5
Features
• High reverse voltage (V
R
= 250 V)
• High reliability with glass seal
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Current
Non-Repetitive Peak Forward Surge Current (at t = 1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
tot
T
J
T
stg
Value
300
250
200
625
1
400
175
- 65 to + 175
Unit
V
V
mA
mA
A
mW
O
C
C
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 250 V
at V
R
= 300 V
Total Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 30 mA, I
rr
= 3 mA, R
L
= 100
Ω
Symbol
V
F
Typ.
-
Max.
1
Unit
V
I
R
-
-
1.5
-
0.2
100
-
100
µA
C
T
t
rr
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/06/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
