1SS5004WS
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
PINNING
PIN
1
DESCRIPTION
Cathode
Anode
2
Features
• Fast switching speed
• High conductance
• High reverse breakdown voltage rating
1
2
YM
Top View
Marking Code: "YM"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current (1 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
d
T
j
T
s
Value
400
350
225
625
2
350
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 20 mA
at I
F
= 100 mA
at I
F
= 200 mA
Reverse Current
at V
R
= 240 V
Reverse Breakdown Voltage
at I
R
= 150 µA
Total Capacitance
at V
R
= 0 , f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 30 mA , i
rr
= 3 mA, R
L
= 100
Ω
Symbol
V
F
Min.
-
-
-
-
400
-
-
Max.
0.87
1
1.25
100
-
5
100
Unit
V
I
R
V
(BR)R
C
T
t
rr
nA
V
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/03/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
