1SS294
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low reverse current
• Low forward voltage
3
1
2
Marking Code: "XM"
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Power Disspation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
P
D
T
j
T
stg
Value
45
40
100
300
150
125
- 55 to + 125
Unit
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 40 V
Total Capacitance
at V
R
= 0 V, f = 1 MHz
Symbol
V
F
I
R
C
T
Max.
0.6
5
25
Unit
V
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
