1SS176
SILICON EPITAXIAL PLANAR DIODE
Switching diode
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Peak Reverse Voltage
Average Rectified Output Current
Forward Voltage
Surge Forward Current at t = 1s
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
I
O
I
F
I
FSM
T
j
T
S
Value
30
35
100
300
1
175
- 65 to + 175
Unit
V
V
mA
mA
A
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 30 V
Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
from I
F
= 100 mA, V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
I
R
C
tot
t
rr
Max.
1.2
0.5
3
4
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
