1N728WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
For super-high speed switching and
wave detection circuit applications
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
PP
Top View
Marking Code: "PP"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Forward Current
Peak Forward Current
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F
I
FM
T
j
T
s
Value
30
30
30
150
125
- 55 to + 125
Unit
V
V
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 30 mA
Reverse Current
at V
R
= 30 V
Terminal Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 1 mA, R
L
= 100
Ω
Detection Efficiency
at V
in
= 3 V
(peak)
, f = 30 MHz, R
L
= 3.9 KΩ, C
L
= 10 pF
Symbol
V
F
Typ.
-
-
-
1.5
1
65
Max.
0.4
1
0.3
-
-
-
Unit
V
I
R
C
T
t
rr
η
µA
pF
ns
%
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
