1N6263WT
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
I
Top View
Marking Code: "I"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Power Dissipation
Max. Single Cycle Surge Forward Current (10 s Square
wave)
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
P
tot
I
FSM
T
j
T
S
Value
40
400
2
150
- 55 to + 150
Unit
V
mW
A
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 10 µA
Forward Voltage
at I
F
= 1 mA
at I
F
= 15 mA
Reverse Leakage Current
at V
R
= 30 V
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 5 mA, recover to 0.1 I
R
Symbol
V
(BR)R
Min.
40
-
-
-
-
-
Max.
-
0.39
0.9
200
2.2
1
Unit
V
V
F
V
I
R
C
tot
t
rr
nA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
