1N5817WB-1N5819WB
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Marking Code: 1N5817WB:
A0
1N5818WB:
ME
1N5819WB:
SR
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
Power Dissipation
Operating Temperature Range
Storage Temperature Range
1N5817WB
1N5818WB
1N5819WB
Symbol
V
R
I
O
I
FSM
P
tot
T
j
T
S
Value
20
30
40
1
25
450
- 55 to + 150
- 55 to + 150
Unit
V
A
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 1 mA
1N5817WB
1N5818WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
1N5819WB
1N5819WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
C
D
Symbol
V
BR
Min.
20
30
40
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
1
1
0.05
0.075
0.45
0.45
0.55
0.6
0.75
0.875
0.9
120
pF
Unit
V
Reverse Voltage Leakage Current
at V
R
= 20 V
at V
R
= 30 V
at V
R
= 40 V
at V
R
= 4 V
at V
R
= 6 V
Forward Voltage
at I
F
= 0.1 A
at I
F
= 1 A
I
R
mA
V
F
V
at I
F
= 3 A
Diode Capacitance
at V
R
= 4 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/12/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
