1N4151W
Silicon Epitaxial Planar Small Signal Diode
Features
•
•
SOD 123 package
Fast switching
Absolute Maximum Ratings (Ta=25℃)
Parameter
Peak reverse voltage
Reverse voltage
Average rectified current half wave
Rectification with resistive load f≧50Hz
Surge forward current t<1s Tj=25℃
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
P
tot
R
thJA
T
J
T
stg
Limits
75
50
150*
500
410*
450*
150
-65 to +150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
*
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (Ta=25℃)
Parameter
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
Rectification efficiency
Symbol Min Typ Max
-
-
1.0
V
F
I
R
-
-
50
50
-
-
V
(BR)R
75
-
-
2
C
tot
t
rr
-
-
4.0
-
-
2.0
η
v
0.45 -
-
Unit
Conditons
V I
F
=50mA
nA V
R
=50V
µA V
R
=20V, T
J
=150℃
V
pF
ns
ns
-
Tested with 5µA pulses
V
F
=V
R
=0V
From I
F
=10mA through I
R
=10mA to I
R
=1mA
From I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100Ω
f=100MHz, V
RF
=2V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/05/2005
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
