BAV70
Silicon Epitaxial Planar Switching Diode
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
1
3
2
Marking Code:
A4
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150
O
C
at V
R
= 75 V, T
J
= 150
O
C
S
®
H
C
E
T
M
E
Symbol
V
RM
V
R
I
O
Value
100
75
Unit
V
V
200
1
2
mA
I
FM
300
mA
A
at t = 1 s
at t = 1 µs
I
FSM
P
d
T
j
350
mW
O
150
C
C
T
stg
- 55 to + 150
O
Parameter
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
I
R
Min.
-
-
-
-
Max.
715
855
1
1.25
25
2.5
30
50
-
2
4
Unit
mV
mV
V
V
nA
µA
µA
µA
V
pF
ns
-
-
-
75
-
-
Reverse Breakdown Voltage
at I
R
= 100 µA
Total Capacitance
at V
R
= 0 , f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA to I
rr
= 1 mA, R
L
= 50
Ω
V
(BR)R
C
T
t
rr
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
Dated : 15/06/2009
SEMTECH [ SEMTECH CORPORATION ]
