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SFP70N06 参数 Datasheet PDF下载

SFP70N06图片预览
型号: SFP70N06
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 1053 K
品牌: SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
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PRELIMINARY
SemiWell
Semiconductor
SFP70N06
N-Channel MOSFET
Features
Low R
DS
(on) (0.014Ω )@V
GS
=10V
Low Gate Charge (Typical 70nC)
Low Crss (Typical 160pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
Symbol
2. Drain
1. Gate
3. Source
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 3)
(Note 1)
Parameter
Value
60
70
51
280
±25
800
7.0
158
1.05
- 55 ~ 175
300
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
0.5
-
Max.
0.95
-
62.5
Units
°C/W
°C/W
°C/W
September, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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