ꢀ
SFF7N60
N-Channel MOSFET
Features
◆ꢀ RDS(ON)ꢀMaxꢀ1.2ꢀohmꢀatꢀVGSꢀ=ꢀ10Vꢀ
◆ꢀ GateꢀChargeꢀ(ꢀTypicalꢀ29.0nC)ꢀ
◆ꢀ Improveꢀdv/dtꢀcapability,ꢀFastꢀswitchingꢀ
◆ꢀ 100%ꢀavalancheꢀTestedꢀ
General Description
Thisꢀ MOSFETꢀ isꢀ producedꢀ usingꢀ advancedꢀ planarꢀ stripꢀ
DMOSꢀ technology.ꢀ Thisꢀ latestꢀ technologyꢀ hasꢀ beenꢀ
especiallyꢀ designedꢀ toꢀ minimizeꢀ onꢁstateꢀ resistanceꢀ haveꢀ aꢀ
highꢀruggedꢀavalancheꢀcharacteristics.ꢀTheseꢀdeviceꢀareꢀwellꢀ
suitedꢀ forꢀ highꢀ efficiencyꢀ switchꢀ modeꢀ powerꢀ supplyꢀ activeꢀ
powerꢀfactorꢀcorrection.ꢀElectronicꢀlampꢀbasedꢀonꢀhalfꢀbridgeꢀ
topology
AbsoluteꢀMaximumꢀRatingsꢀ(TJꢀ=ꢀ25℃ unless otherwise specified)ꢀ
ꢀ
Symbolꢀ
Parameterꢀ
Ratingsꢀ
600ꢀ
Unitsꢀ
VDSS
IDꢀ
ꢀ
DrainꢁSourceꢀVoltageꢀ
Vꢀ
Aꢀ
DrainꢀCurrentꢀ ꢀ TC=25℃
7ꢀ
TC=100℃ꢀ
GateꢁSourceꢀVoltageꢀ
4.3ꢀ
VGSS
ꢀ
±ꢀ 30ꢀ
28ꢀ
Vꢀ
Aꢀ
IDM
EAS
EAR
ꢀ
DrainꢀCurrentꢀ ꢀ pulseꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ
SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ
RepetitiveꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ ꢀ
PeakꢀdiodeꢀRecoveryꢀdv/dtꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ3)ꢀ
PowerꢀDissipationꢀTC=25℃ꢀ
ꢀ
267ꢀ
mJꢀ
mJꢀ
V/nsꢀ
Wꢀ
ꢀ
15.2ꢀ
4.5ꢀ
dv/dtꢀ
PDꢀ
152ꢀ
Tj,ꢀTSTG
ꢀ
OperationꢀandꢀStorageꢀTemperatureꢀrangeꢀ
ꢁ45ꢀ~ꢀ150ꢀ
℃ꢀ
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
