SemiWell Semiconductor
SCF6C60
Silicon Controlled Rectifiers
Symbol
3. Gate
○
○
○
Features
2. Anode
1. Cathode
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
= 6 A )
T(RMS)
◆ Low On-State Voltage (1.4V(Typ.)@ I
)
TM
◆ Isolation Voltage ( V
= 1500V AC )
ISO
TO-220F
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Ratings
Units
600
3.8
6
V
A
A
Half Sine Wave : TC = 100 °C
180° Conduction Angle
IT(AV)
IT(RMS)
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
ITSM
I2t
Surge On-State Current
66
21
A
I2t for Fusing
A2s
t = 8.3ms
di/dt
PGM
PG(AV)
IFGM
VRGM
VISO
TJ
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
50
A/㎲
W
W
A
5
0.5
2
Reverse Peak Gate Voltage
5.0
V
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
A.C. 1 minute
1500
V
- 40 ~ 125
- 40 ~ 150
°C
°C
TSTG
Aug, 2003. Rev. 1
1/5
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