SemiWell Semiconductor
SBP13009A
High Voltage Fast-Switching NPN Power Transistor
Features
Symbol
○
2.Collector
- Very High Switching Speed (Typical 60ns@8.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 320mV@8.0A/1.6A)
- Wide Reverse Bias S.O.A
○
1.Base
○
3.Emitter
General Description
TO-220
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching mode power
supply.
1
2
3
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
Parameter
Value
700
400
9.0
Units
Collector-Emitter Voltage ( VBE = 0 )
V
V
V
A
A
A
A
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
12
Collector Peak Current ( tP ＜ 10 ms )
Base Current
ICM
25
IB
6.0
Base Peak Current ( tP ＜ 10 ms )
Total Dissipation at TC = 25 °C
IBM
12
PC
TSTG
TJ
100
- 65 ~ 150
150
W
°C
°C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
Parameter
Value
1.25
40
Units
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
May, 2003. Rev. 3
1/6
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