SBP13007-O
SemiWell Semiconductor
High Voltage Fast-Switching NPN Power Transistor
Features
Symbol
○
2.Collector
- High Switching Speed
- Short storge time
- Wide Reverse Bias S.O.A
○
1.Base
○
3.Emitter
General Description
TO-220
This devices is designed for high voltage, high speed switching
characteristic,especially suitable for ballast sysytem.
1
2
3
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
Parameter
Value
700
400
9.0
Units
Collector-Emitter Voltage ( VBE = 0 )
V
V
V
A
A
A
A
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
8.0
Collector Peak Current ( tP ＜ 5 ms )
Base Current
ICM
16
IB
4.0
Base Peak Current ( tP ＜ 5 ms )
Total Dissipation at TC = 25 °C
IBM
8.0
PC
TSTG
TJ
80
- 65 ~ 150
150
W
°C
°C
Storage Temperature
Max. Operating Junction Temperature
June, 2006. Rev. 1
1/4
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
