SAMWIN
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
SW 9N 90
Fig. 8. On resistance variation
vs. junction temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig. 9. Maximum drain current vs.
case temperature.
10
Fig. 10. Maximum safe operating area
10
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
1 ms
10 ms
DC
8
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
6
10
0
4
2
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
25
50
75
100
125
150
10
-2
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
10
0
Z
θ
JC
(t), Thermal Response
D = 0 .5
-1
10
0 .2
0 .1
0 .0 5
0 .0 2
※
N o te s :
1 . Z
θ
J C
(t) = 0 .4 5
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
P
DM
t
1
s in g le p u ls e
t
2
10
-2
0 .0 1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
4/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
