SAMWIN
Fig. 1. On-state characteristics
15V
10V
9V
8V
6V
Bottom : 5.5V
Top :
SW840A
Fig. 2. Transfer characteristics
10
1
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
25 C
150 C
10
0
o
o
-55 C
*. Notes :
1. 250us Pulse Test
2. T
C
= 25 C
O
o
*. Notes :
1. V
DS
= 50V
2. 250us Pulse Test
10
0
10
0
-1
10
10
1
2
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
2.0
1.8
Fig. 4. On state current vs.
diode forward voltage
Drain-Source On-Resistance [Ω]
I
DR
, Reverse Drain Current [A]
10
1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
5
10
15
20
25
30
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
,
10
0
150 C
O
25 C
*. Notes :
1. V
GS
= 0V
2. 250us Pulse Test
O
*. Note : T
J
= 25 C
10
-1
O
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
Fig. 6. Gate charge characteristics
12
V
GS
, Gate-Source Voltage [V]
2500
C
rss
=C
gd
10
V
DS
= 400V
V
DS
= 250V
Capacitance [pF]
2000
*. Notes :
1. V
GS
= 0V
2. f=1MHz
8
1500
C
iss
1000
6
4
500
C
oss
C
rss
2
*. Note : I
D
= 8.5 A
0
0
5
10
15
20
25
30
35
40
45
50
0
0
10
20
30
40
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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