SAMWIN
Fig. 1. On-state characteristics
3
SW50N06A
Fig. 2. Transfer characteristics
10
V
GS
[ V ] Top 15
10
8
7
6
5.5
5
Bottom 4.5
10
2
10
2
Id[ A ], Drain Current
I
D
[ A ], Drain Current
25[،ة]
125[،ة]
10
1
-55[،ة]
10
1
،ط Note
1. 250§ء Pulse Test
2. T
C
= 25،ة
10
0
،ط Note
V
DS
= 30 [ V ]
250§ء Pulse Test
10
0
10
-1
10
0
10
1
2
4
6
8
10
V
DS
[V], Drain to Source Voltage
Vgs[ v ], Gate-Source Voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
70
Fig. 4. On state current vs.
diode forward voltage
Drain to Source on Resistance
60
10
2
50
40
30
V
GS
=10[V]
V
GS
=20[V]
،ط Note
T
J
= 25،ة
0
50
100
150
200
I
DR
[ A ], Reverse Drain Current
R
DS(ON)
[m§ظ]
10
1
20
Tj=175 C
o
Tj=25 C
،ط Note
V
GS
= 0V
250§ء Pulse Test
o
10
0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
[ A ], Drain Current
Vsd[ V ], Source-Drain Voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
Fig. 6. Gate charge characteristics
12
2500
C
oss
C
iss
2. C
Oss
= C
ds
+ C
gd
3. C
rss
= C
gd
،ط Note
1. V
GS
= 0[V]
2. Frequency = 1[MHz]
V
GS
[ V ], Gate to Source Voltage[V]
1. C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
10
Capcitance [ pF ]
2000
8
V
DS
= 30V
V
DS
=12V
V
DS
= 48V
1500
6
1000
C
rss
4
500
2
،ط Note
I
D
= 50A
0
5
10
15
20
25
30
35
40
45
0
-1
10
0
10
0
10
1
V
DS
[ V ], Drain to Source Voltage
Gate Charge [nC]
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
