SAMWIN
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
SW226N
10
1
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
1
I
D
, Drain Current [A]
10
0
I
D
, Drain Current [A]
10
0
150 C
25 C
-55 C
،ط Notes :
1. V
DS
= 50V
2. 250¥ىs Pulse Test
o
o
o
10
-1
،ط Notes :
1. 250¥ىs Pulse Test
2. T
C
= 25،ة
10
-2
10
-1
10
0
10
1
10
-1
2
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
6
10
1
Drain-Source On-Resistance [¥ط]
4
V
GS
= 10V
3
I
DR
, Reverse Drain Current [A]
5
R
DS(ON)
,
150،ة
10
0
25،ة
2
V
GS
= 20V
1
،ط Note : T
J
= 25،ة
،ط Notes :
1. V
GS
= 0V
2. 250¥ىs Pulse Test
0
0
2
4
6
8
10
12
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
750
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
Fig. 6. Gate charge characteristics
12
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 300V
V
DS
= 480V
Capacitance [pF]
500
C
iss
،ط Notes :
1. V
GS
= 0V
2. f=1MHz
8
6
C
oss
250
4
C
rss
2
*. Note : I
D
= 3.9A
0
0
5
10
15
20
25
30
35
0
0
4
8
12
16
20
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
