SAMWIN
SW50N06A
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
103
VGS[ V ] Top 15
102
101
100
10
8
7
6
5.5
102
101
100
5
Bottom 4.5
VDS = 30 [ V ]
10-1
100
101
2
4
6
8
10
VDS[V], Drain to Source Voltage
Vgs[ v ], Gate-Source Voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
70
60
50
40
102
101
VGS=10[V]
30
Tj=175oC
Tj=25oC
20
VGS=20[V]
VGS = 0V
10
0
100
0.2
0
50
100
150
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID[ A ], Drain Current
Vsd[ V ], Source-Drain Voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
12
10
3000
1. Ciss = Cgs + Cgd (Cds = shorted)
2. COss = Cds + Cgd
Coss
2500
2000
1500
1000
500
3. Crss = Cgd
VDS =12V
VDS = 30V
1. VGS = 0[V]
8
Ciss
VDS = 48V
2. Frequency = 1[MHz]
6
4
2
0
Crss
ID = 50A
0
10-1
100
101
0
5
10
15
20
25
30
35
40
45
VDS[ V ], Drain to Source Voltage
Gate Charge [nC]
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