SAMWIN
SW50N06A
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.023
Ω)@V
GS
=10V
■
Gate Charge (Typ 30nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-251
TO-252
BV
DSS
: 60V
I
D
: 50A
R
DS(ON)
: 0.023 ohm
1
2
1 2
3
3
2
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
3
Order Codes
Item
1
2
Sales Type
SW I 50N06A
SW D 50N06A
Marking
SW50N06A
SW50N06A
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
60
50
34
200
±
20
780
13
7
108
0.86
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Mar. 2011. Rev. 2.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
1.15
50
62.5
Unit
o
C/W
o
C/W
o
C/W
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
