SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
I
DSS
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
V
DS
=30V, V
GS
=0V
V
DS
=24V, T
C
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
30
-
-
-
-
Parameter
Test conditions
Min.
SW100N03
Typ.
Max.
Unit
-
-
-
-
-
-
1
100
100
-100
V
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
Gate threshold voltage
Drain to source on state resistance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 50A
1.0
-
-
4.2
3.0
5.3
V
mΩ
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=15V, V
GS
=5V, I
D
=16A
V
DS
=15V, I
D
=1A,
R
G
=6Ω ,VGS=10V
V
GS
=0V, V
DS
=15V, f=1MHz
-
-
-
-
-
-
-
-
-
-
9500
800
300
25.7
10
128
34
50
20.8
19
-
-
-
50
20
ns
200
70
65
-
-
nC
pF
Source to drain diode ratings characteristics
Symbol
I
S
V
SD
Parameter
Continuous source current
Diode forward voltage drop.
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=110A, V
GS
=0V
Min.
-
-
Typ.
-
-
Max.
90
1.5
Unit
A
V
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 200uH, I
AS
= 110A, V
DD
= 25V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 110A, di/dt = 300A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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