SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified
Symbol
Off characteristics
BV
DSS
I
DSS
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
R
DS(ON)
Gate threshold voltage
Drain to source on state resistance
V
DS
=V
GS
, I
D
=50uA
V
GS
=10V, I
D
= 0.4A
3.0
V
GS
=0V, I
D
=250uA
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
600
-
-
-
-
Parameter
Test conditions
Min.
SW1N60A
Typ.
Max.
Unit
-
-
-
-
-
-
1
10
100
-100
V
uA
uA
nA
nA
-
9.5
4.5
15
V
Ω
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=480V, V
GS
=10V, I
D
=0.5A
V
DS
=300V, I
D
=0.5A, R
G
=25Ω
V
GS
=0V, V
DS
=25V, f=1MHz
-
-
-
-
-
-
-
-
-
-
120
18
4
15
75
30
35
7
1.3
2.4
150
25
6
35
140
60
60
9
-
-
nC
ns
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Breakdown voltage temperature
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=0.8A, V
GS
=0V
I
S
=0.5A, V
GS
=0V,
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
150
0.44
Max.
0.5
2.0
1.5
-
-
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 95mH, I
AS
= 0.5A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 0.5A, di/dt = 300A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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