SAMWIN
SW7N60A
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 1.3
Ω)@V
GS
=10V
■
Gate Charge (Typ 38nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220F
TO-220
BV
DSS
: 600V
I
D
: 7.0A
R
DS(ON)
: 1.3ohm
1
2
1
3
2
3
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
1
3
Order Codes
Item
1
2
Sales Type
SW P 7N60A
SW F 7N60A
Marking
SW7N60A
SW7N60A
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
147
1.18
-55 ~ + 150
300
(note 1)
7.0
5.1
28
±
30
490
14.2
4.5
53*
0.43
Parameter
Value
TO-220
600
7.0*
4.1*
TO-220F
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
0.85
0.5
62.5
TO-220F
2.35
Unit
o
C/W
o
C/W
o
C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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