SAMWIN
SW2N70
Electrical characteristic ( TC = 25oC unless otherwise specified
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
IDSS
Drain to source breakdown voltage
Drain to source leakage current
VGS=0V, ID=250uA
700
-
0.4
-
-
V
VDS=700V, VGS=0V
VDS=560V, TC=125oC
VGS=30V, VDS=0V
-
-
-
1
uA
uA
nA
100
100
-
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
VGS=-30V, VDS=0V
-
-
-100
nA
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 1.0A
2.0
-
-
4.0
7.0
V
5.0
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
-
-
-
-
-
-
-
-
-
-
450
45
9
530
50
10
55
90
100
70
21
3
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
VDS=350V, ID=2A, RG=25Ω
VDS=560V, VGS=10V, ID=2A
pF
ns
-
-
td(off)
tf
Turn off delay time
Fall time
-
-
Qg
Total gate charge
Gate-source charge
Gate-drain charge
15.1
2.2
4.4
Qgs
Qgd
nC
6
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
2.0
8.0
1.4
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=2A, VGS=0V
-
V
Trr
260
1.09
ns
uC
IS=2A, VGS=0V,
dIF/dt=100uA/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 95mH, IAS = 0.5A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 0.5A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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