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26NABI066V3 参数 Datasheet PDF下载

26NABI066V3图片预览
型号: 26NABI066V3
PDF下载: 下载PDF文件 查看货源
内容描述: 三相桥式整流器 [Three-phase bridge rectifier]
分类和应用:
文件页数/大小: 6 页 / 1410 K
品牌: SEMIKRON [ SEMIKRON INTERNATIONAL ]
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SKiiP 26NABI066V3
Absolute Maximum Ratings
(T
s
=25° unless otherwise specified)
C,
Symbol
Parameter
IGBT - Inverter, Chopper
Conditions
Values
600
Units
V
A
A
A
A
µs
V
CES
I
C
I
Cnom
I
CRM
t
psc
C
T
j
= 175 °
T
s
= 25 °
C
T
s
= 70 °
C
59
47
50
100
≤6
I
CRM
= 2xI
Cnom
V
CC
= 360 V
V
GE
15 V
V
CES
600 V
V
DC
=360V, V
GE
=15V, Tj=150°
C
MiniSKiiP
®
CIB IPM
Three-phase bridge rectifier + brake
chopper + three-phase inverter
intelligent power module
T
j(max)
-40 ... +175
T
s
= 25 °
C
T
s
= 70 °
C
54
42
50
100
345 (320)
-40 ... +175
C
T
j
= 25°
C,
C
T
s
= 70° T
j
= 150°
T
j
= 25 ° 10ms, half sine wave
C,
800
37
370
-40 ... +150
17
17
-3 … 600
VSS-0.3 … VCC+0.3
VSS-0.3 … VCC+0.3
10
VSS-0.3 … VCC+0.3
20
-40 ... +125
-40 ... +125
Applied between P-NU, NV, NW
Applied between P-NU, NV, NW
AC, rms, f=60Hz, t=1min, all pins to heat sink
Per power terminal (20A / Spring)
400
≥400
2500
20
°
C
A
A
A
A
A
°
C
V
A
A
°
C
V
V
V
V
V
mA
V
kHz
°
C
°
C
V
V
V
A
Diode - Inverter, Chopper
C
T
j
= 175 °
I
F
SKiiP 26NABI066V3
Data sheet status: Preliminary
I
Fnom
I
FRM
I
FSM
T
j(max)
V
RRM
I
F
I
FSM
T
j(max)
I
FRM
= 2xI
Fnom
,
C
t
p
= 10 ms, sin 180° T
j
= 25 °
Diode - Rectifier
Features
• One screw assembly of driver,
module and heat sink
• Solder-free assembly of power,
control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes
in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all
channels
• Overcurrent shut-down via current
sensing
• Interlock logic for shoot-through
prevention
• Common shut-down signal
• Undervoltage lockout for all channels
with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
Driver - Inverter, Chopper
Applied between VCC-VSS, VCCL-VSSL
VCC
Applied between VB1-U, VB2-V, VB3-W
VBx
Voltage to VSS, t
p
<500ns
VSx
Applied between HIN1, LIN1, HIN2, LIN2, HIN3, LIN3,
V
in
LIN4, /ERRIN - VSS
V
oErr
Applied between /ERROUT-VSS
I
max(EO)
V
ITRIP
f
max
Temperature
Between /ERROUT-VSS
Applied between ITRIP-VSS
T
c
T
stg
System
V
CC
V
CC(s)
V
isol
I
tRMS
Typical Applications
Industrial- & consumer drives
Power supplies (SMPS & UPS)
Industrial air conditioner
C,
Electrical Characteristics
(T
s
=25° unless otherwise specified)
Symbol
Parameter
Conditions
T
j
= 25°
C
T
j
= 150 °
C
T
j
= 25 °
C
T
j
= 150 °
C
min.
Limits
typ.
1.45
1.65
0.9
0.8
11
17
max.
1.85
2.05
1.1
1.0
15
21
1
Units
V
V
V
V
m
mA
mJ
mJ
ns
ns
ns
ns
K/W
IGBT - Inverter, Chopper
I
C
= 50 A
V
CEsat
V
GE
= 15 V
Remarks
V
CEO
r
CE
I
CES
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
R
th(j-s)I
V
F
= V
EC
V
F0
r
F
E
rr
Qrr
IRRM
R
th(j-s)D
I
F
=50A
di
F
/dt= -1771A/µs
V
CC
=300V, V
GE
= 0 V
per diode
VGE = 15 V
V
GE
= 0 V
V
CE
= 600 V
V
C
C
=300V
I
C
=50A
R
G on
/ R
G off
= 4.7
di/dt
on
= 648 A/µs
di/dt
off
= 1271 A/µs
per IGBT
T
j
= 25 °
C
T
j
= 150 °
C
T
j
= 25 °
C
T
j
= 150 °
C
T
j
= 150 °
C
T
j
= 150 °
C
T
j
= 150 °
C
T
j
= 150 °
C
T
j
= 150 °
C
3.0
2.0
756
78
1276
128
1.1
Diode - Inverter, Chopper
I
F
= 50 A
V
GE
= 0 V (Chiplevel)
T
j
= 25 °
C
T
j
= 150 °
C
T
j
= 25 °
C
T
j
= 150 °
C
T
j
= 25 °
C
T
j
= 150 °
C
T
j
= 150 °
C
T
j
= 150 °
C
T
j
= 150 °
C
1.5
1.5
1.0
0.9
10
12
1.0
2320
57
1.6
1.7
1.7
1.1
1.0
12
14
V
V
V
V
m
m
mJ
µC
A
K/W
NABI
1/6
09.08.2010
© by SEMIKRON