TIP145T/146T/147T
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
PNP Epitaxial
Silicon Darlington
Transistor
- Complementary to TIP140/141/142
Equivalent Circuit
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP145T
: TIP146T
VCBO
-60
-80
-100
V
V
V
: TIP147T
Collector-Emitter Voltage : TIP145T
: TIP146T
VCEO
-60
-80
-100
V
V
V
: TIP147T
TO-220
1. Base
2. Collector
3. Emitter
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
-5
-10
-15
-0.5
2
80
V
A
A
A
W
W
℃
℃
150
-65~150
1
2
3
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
VCEO(SUS)
: TIP145T
: TIP146T
: TIP147T
-60
-80
-100
V
V
V
IC=-30mA, IB=0
Collector Cut-off Current
: TIP145T
ICEO
VCE=-30V,IB=0
-2
-2
-2
㎃
㎃
㎃
: TIP146T
: TIP147T
V
V
CE=-40V,IB=0
CE=-50V,IB=0
Collector Cut-off Current
: TIP145T
ICBO
VCE=-60V,IE=0
-1
-1
-1
㎃
㎃
㎃
: TIP146T
: TIP147T
V
V
CE=-80V,IE=0
CE=-100V,IE=0
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
VEB=-5V,IC=0
-2
㎃
VCE=-4V,IC=-5A
1000
500
V
CE=-4V,IC=-10A
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-5A,IB=-10mA
IC=-10A,IB=-40mA
-2
-3
V
V
Base-Emitter ON Voltage
VBE(on)
Cob
VCE=-4V,IC=-10A
-3
V
VCB=10V,IE=0, f=0.1MHz
Output Capacitance
200
㎊
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
