TIP125/126/127
TIP125/126/127
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP120/121/122
PNP Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
Absolute Maximum Ratings
CHARACTERISTICS
Collector-Base Voltage
: TIP125
: TIP126
: TIP127
T
a
=25℃ unless otherwise noted
SYMBOL
V
CBO
RATING
-60
-80
-100
-60
-80
-100
-5
-5
-8
-120
2
65
150
-65~150
UNIT
V
V
V
V
V
V
V
A
A
㎃
W
W
℃
℃
TO-220
1. Base
2. Collector
3. Emitter
Collector-Emitter Voltage : TIP125
: TIP126
: TIP127
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
12
3
Electrical Characteristics
CHARACTERISTICS
Collector-Emitter Sustaining Voltage
: TIP125
: TIP126
: TIP127
Collector Cut-off Current
: TIP125
: TIP126
: TIP127
Collector Cut-off Current
: TIP125
: TIP126
: TIP127
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
T
a
=25℃ unless otherwise noted
SYMBOL
V
CEO
(SUS)
I
C
=-100mA, I
B
=0
-60
-80
-100
-2
-2
-2
-1
-1
-1
-2
1000
1000
-2
-4
-2.5
300
V
V
V
㎊
V
V
V
㎃
㎃
㎃
㎃
㎃
㎃
㎃
Test Condition
Min
Max
Unit
I
CEO
V
CE
= -30V,I
B
=0
V
CE
= -40V,I
B
=0
V
CE
= -50V,I
B
=0
I
CBO
V
CE
= -60V,I
E
=0
V
CE
= -80V,I
E
=0
V
CE
= -100V,I
E
=0
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
V
EB
= -5V,I
C
=0
V
CE
= -3V,I
C
= -0.5A
V
CE
= -3V,I
C
= -3A
I
C
= -3A,I
B
= -12mA
I
C
= -5A,I
B
= -20mA
V
CE
= -3V,I
C
= -3A
V
CB
= -10V,I
E
=0, f=0.1MHz
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎
SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
