TIP105/106/107
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
PNP Epitaxial
Silicon Darlington
Transistor
- Complementary to TIP100/101/102
Equivalent Circuit
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP105
VCBO
-60
-80
-100
V
V
V
: TIP106
: TIP107
Collector-Emitter Voltage : TIP105
VCEO
-60
-80
-100
V
V
V
: TIP106
: TIP107
TO-220
1. Base
2. Collector
3. Emitter
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
VEBO
IC
ICP
IB
-5
-8
-15
V
A
A
-1
A
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
PC
PC
TJ
2
80
150
-65~150
W
W
℃
℃
1
2
3
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
VCEO(SUS)
: TIP105
: TIP106
: TIP107
-60
-80
-100
V
V
V
IC=30mA, IB=0
Collector Cut-off Current
: TIP105
ICEO
VCE= -30V,IB=0
-50
-50
-50
㎂
㎂
㎂
: TIP106
: TIP107
V
V
CE= -40V,IB=0
CE= -50V,IB=0
Collector Cut-off Current
: TIP105
ICBO
VCE= -60V,IE=0
-50
-50
-50
㎂
㎂
㎂
: TIP106
: TIP107
V
V
CE= -80V,IE=0
CE= -100V,IE=0
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
VEB= -5V,IC=0
-2
㎃
VCE= -4V,IC= -3A
1000
200
20000
V
CE= -4V,IC= -8A
Collector-Emitter Saturation Voltage
VCE(sat)
IC= -3A,IB= -6mA
IC= -8A,IB= -80mA
-2
-2.5
V
V
Base-Emitter ON Voltage
VBE(on)
Cob
VCE= -4V,IC= -8A
-2.8
300
V
VCB= -10V,IE=0, f=0.1MHz
Output Capacitance
㎊
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
