Typical Characteristics
(SPGN0365A)
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
* Notes :
1. 250us Pulse Test
2. TC = 25oC
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
101
100
150oC
25oC
*
Note :
1. VGS = 0V
2. 250µs Pulse Test
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 130V
VDS = 325V
VDS = 520V
C
C
iss
6
Coss
* Note ;
1. VGS = 0 V
4
C
rss
2. f = 1 MHz
2
* Note : ID = 3.0A
0
-1
10
100
101
0
3
6
9
12
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.PLIMILARY”DEC 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
