KSH5027
High Voltage and High Reliability
- High Speed Switching
- Wide SOA
3 Amperes
NPN Silicon Power Transistor
50 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-220
1. Base
CHARACTERISTICS
SYMBOL
RATING
UNIT
2. Collector
3. Emitter
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
1100
800
7
3
10
1.5
50
150
-55~150
V
V
V
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
A
1
2
3
W
℃
℃
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
1100
800
7
Typ.
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
VCBO
IC=1mA, IE=0
VCEO
IC=5mA, IB=0
IE=1mA, IE=0
V
VEBO
V
ICEX(sus)
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
800
V
Collector Cut0off Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
VCB=800V,IE=0
VEB=5V,IC=0
10
10
40
㎂
㎂
hFE1
hFE2
VCE=5V,IC=0.2A
10
8
V
CE=5V,IC=1A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE(sat)
VBE(sat)
Cob
fT
IC=1.5A,IB=0.3A
2
V
IC=1.5A,IB=0.3A
1.5
V
VCB=10V,IE=0, f=0.1MHz
60
15
㎊
㎒
㎲
㎲
㎲
Current Gain Bandwidth Product
Turn on Time
VCE=10V,IC=0.2A
Vcc=400V, Ic=5A
ton
0.5
3.0
0.3
I
B1=-2.5A, IB2=2A
Storage Time
tstg
RL=200Ω
Fall Time
tf
Note : hFE1 Classification
R :10 ~ 20, O : 15 ~ 30,
Y : 20 ~ 40
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
