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HTB1A60 参数 Datasheet PDF下载

HTB1A60图片预览
型号: HTB1A60
PDF下载: 下载PDF文件 查看货源
内容描述: [4 Quadrants Sensitive TRIAC]
分类和应用: 三端双向交流开关
文件页数/大小: 6 页 / 423 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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VDRM = 600V/800V  
IT(RMS) = 1 A  
ITSM = 13 A  
HTB1A60/HTB1A80  
4 Quadrants Sensitive TRIAC  
I
GT = 5mA/12mA  
Symbol  
FEATURES  
Repetitive Peak Off-State Voltage : 600V/800V  
R.M.S On–State Current (IT(RMS) = 1A)  
Sensitive Gate Trigger Current  
- 5[mA] of IGT at I, II and III Quadrants.  
- 12[mA] of IGT at IV Quadrant.  
TO-92  
Applications  
T1  
G
T2  
AC power or phase control through low output current of MCU or IC  
suck like Heater, Solenoid valve control, etc.  
General Description  
Semihow’s sensitive TRIAC product is a glass passivated device,  
has a low gate trigger current, high stability in gate trigger current to  
variation of operating temperature and high off state voltage. It is  
generally suitable for power and phase control in ac application.  
Absolute Maximum Ratings  
(TJ=25unless otherwise specified )  
Ratings  
Symbol  
Parameter  
Conditions  
Unit  
HTB1A60  
600  
HTB1A80  
800  
VDRM Repetitive Peak Off-State Voltage  
VRRM Repetitive Peak Reverse Voltage  
V
V
A
A
Sine wave, 50/60Hz, Gate open  
Full sine wave, TC = 72oC  
600  
800  
IT(AV)  
Average On-State Current  
0.9  
1
IT(RMS) R.M.S. On-State Current  
½ cycle, 50Hz/60Hz, Sine wave,  
Non repetitive  
ITSM  
I2t  
Surge On-State Current  
Fusing Current  
12/13  
0.7  
2
A
A2S  
W
t = 10ms  
Forward Peak Gate Power  
Dissipation  
PGM  
TJ = 125 °C  
Forward Average Gate Power  
Dissipation  
PG(AV)  
IFGM  
TJ = 125 °C, over any 20ms  
0.2  
W
Forward Peak Gate Current  
TJ = 125 °C, pulse width ≤ 20us  
TJ = 125 °C, pulse width ≤ 20us  
0.5  
6
A
V
VRGM Reverse Peak Gate Voltage  
TJ  
Operating Junction Temperature  
Storage Temperature  
-40~+125  
-40~+150  
oC  
oC  
TSTG  
SEMIHOW REV.A1,March 2013