Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1500
1200
900
600
300
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 50V
VDS = 125V
C
VDS = 200V
C
iss
6
Coss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
4
2
C
rss
※ Note : ID = 8.1 A
0
-1
10
100
101
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
