Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
9
VGS = 10V
6
VGS = 20V
3
* Note : TJ = 25oC
0
0
1
2
3
4
5
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
400
300
200
100
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
V
DS = 140V
C
VDS = 350V
VDS = 560V
C
iss
6
Coss
* Note ;
1. VGS = 0 V
4
2. f = 1 MHz
C
2
rss
* Note : ID = 1.6A
6
0
-1
100
101
0
2
4
8
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
