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HFP2N70S 参数 Datasheet PDF下载

HFP2N70S图片预览
型号: HFP2N70S
PDF下载: 下载PDF文件 查看货源
内容描述: 700V N沟道MOSFET [700V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 941 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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Electrical Characteristics TC=25 °C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max Units  
On Characteristics  
VGS  
--  
Gate Threshold Voltage  
VDS = VGS, ID = 250 ㎂  
2.0  
--  
4.0  
7.0  
V
RDS(ON) Static Drain-Source  
On-Resistance  
5.0  
V
GS = 10 V, ID = 0.8 A  
Off Characteristics  
BVDSS  
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂  
700  
--  
--  
--  
--  
V
ΔBVDSS Breakdown Voltage Temperature  
ID = 250 ㎂, Referenced to 25℃  
DS = 700 V, VGS = 0 V  
0.4  
V/℃  
/ΔTJ  
Coefficient  
IDSS  
--  
--  
--  
--  
10  
V
Zero Gate Voltage Drain Current  
VDS = 560 V, TC = 125℃  
100  
IGSSF  
IGSSR  
Gate-Body Leakage Current,  
Forward  
VGS = 30 V, VDS = 0 V  
--  
--  
--  
--  
100  
Gate-Body Leakage Current,  
Reverse  
VGS = -30 V, VDS = 0 V  
-100  
Dynamic Characteristics  
Ciss  
Input Capacitance  
--  
--  
--  
280  
30  
5
360  
40  
VDS = 25 V, VGS = 0 V,  
f = 1.0 MHz  
Coss  
Crss  
Output Capacitance  
Reverse Transfer Capacitance  
6.5  
Switching Characteristics  
td(on)  
Turn-On Time  
--  
--  
--  
--  
--  
--  
--  
12  
10  
24  
20  
90  
50  
8.0  
--  
VDS = 350 V, ID = 1.6 A,  
tr  
td(off)  
tf  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
RG = 25 Ω  
45  
(Note 4,5)  
25  
Qg  
6.2  
1.1  
2.2  
nC  
nC  
nC  
VDS = 560V, ID = 1.6 A,  
Qgs  
Qgd  
VGS = 10 V  
(Note 4,5)  
--  
Source-Drain Diode Maximum Ratings and Characteristics  
IS  
Continuous Source-Drain Diode Forward Current  
Pulsed Source-Drain Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
1.6  
6.4  
1.4  
--  
A
ISM  
VSD  
trr  
Source-Drain Diode Forward Voltage IS = 1.6 A, VGS = 0 V  
--  
V
Reverse Recovery Time  
Reverse Recovery Charge  
260  
1.09  
μC  
IS = 1.6 A, VGS = 0 V  
diF/dt = 100 A/μs (Note 4)  
--  
Qrr  
Notes ;  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L=45mH, IAS=1.6A, VDD=50V, RG=25, Starting TJ =25°C  
3. ISD≤1.6A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C  
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%  
5. Essentially Independent of Operating Temperature  
SEMIHOW REV.A0,Dec 2009